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| INCHANGE Semiconductor isc Product Specification BU941ZP isc Silicon NPN Darlington Power Transistor DESCRIPTION *Built In Clamping Zener *High Operating Junction Temperature APPLICATIONS *Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 350 5 15 30 1 5 155 175 -65~175 UNIT V V A A A A W IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 0.97 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification MJW16010A isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCL VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(sat)-3 ICEO IEBO hFE VECF PARAMETER Clamping Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain C-E Diode Forward Voltage IC= 100mA IC= 8A; IB= 0.1A B CONDITIONS MIN 350 TYP. MAX 500 1.8 1.8 2.0 2.2 2.5 2.7 0.1 0.5 20 UNIT V V V V V V V mA mA IC= 10A; IB= 0.25A IC= 12A; IB= 0.3A IC= 8A; IB= 0.1A B IC= 10A; IB= 0.25A IC= 12A; IB= 0.3A VCE= 300V; IB= 0 VCE= 300V; IB= 0;TC=125 VEB= 5V; IC=0 IC= 5A ; VCE= 10V IF= 10A 300 2.5 V Switching times;Inductive load Storage Time Fall Time IC= 7A; IB= 70mA, RBE= 47; Vclamp= 300V, VBE= 0; L= 7mH B tstg tf 15 0.5 s s isc Websitewww.iscsemi.cn 2 |
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